| Vgs (th) (max) a Id: | 1V @ 250µA |
|---|---|
| Tecnologia: | MOSFET (Metal Oxide) |
| Contenitore dispositivo fornitore: | TO-220AB |
| Serie: | STripFET™ |
| Rds On (max) a Id, Vgs: | 11 mOhm @ 20A, 10V |
| Dissipazione di potenza (max): | 60W (Tc) |
| imballaggio: | Tube |
| Contenitore / involucro: | TO-220-3 |
| temperatura di esercizio: | -55°C ~ 175°C (TJ) |
| Tipo montaggio: | Through Hole |
| Capacità di ingresso (Ciss) (Max) @ Vds: | 990pF @ 25V |
| Carica Gate (Qg) (Max) @ Vgs: | 27nC @ 4.5V |
| Tipo FET: | N-Channel |
| Caratteristica FET: | - |
| Tensione drain-source (Vdss): | 24V |
| Corrente - Drain continuo (Id) @ 25 ° C: | 40A (Tc) |
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