| Vgs (th) (max) a Id: | 4V @ 250µA |
|---|---|
| Tecnologia: | MOSFET (Metal Oxide) |
| Contenitore dispositivo fornitore: | I-Pak |
| Serie: | - |
| Rds On (max) a Id, Vgs: | 5.1 Ohm @ 1.25A, 10V |
| Dissipazione di potenza (max): | 94W (Tc) |
| imballaggio: | Tube |
| Contenitore / involucro: | TO-251-3 Short Leads, IPak, TO-251AA |
| temperatura di esercizio: | -55°C ~ 150°C (TJ) |
| Tipo montaggio: | Through Hole |
| Capacità di ingresso (Ciss) (Max) @ Vds: | 748pF @ 25V |
| Carica Gate (Qg) (Max) @ Vgs: | 17nC @ 10V |
| Tipo FET: | N-Channel |
| Caratteristica FET: | - |
| Tensione drain-source (Vdss): | 900V |
| Corrente - Drain continuo (Id) @ 25 ° C: | 2.5A (Tc) |
GP1M003A080PH
MOSFET N-CH 800V 3A IPAK
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MOSFET N-CH 800V 3A TO220F
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MOSFET N-CH 900V 4A TO220F
GP1M003A080CH
MOSFET N-CH 800V 3A DPAK
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MOSFET N-CH 400V 3.4A IPAK
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MOSFET N-CH 800V 3A TO220
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2N4403_J05Z
TRANS PNP 40V 0.6A TO-92
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IXFK150N15P
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ATS-06H-06-C1-R0
HEATSINK 45X45X10MM XCUT
ATS-02D-166-C3-R0
HEATSINK 25X25X15MM R-TAB T412
ATS-19B-139-C2-R0
HEATSINK 25X25X20MM L-TAB T766
ATS-04F-13-C1-R0
HEATSINK 50X50X15MM XCUT
ATS-03E-159-C3-R0
HEATSINK 45X45X10MM L-TAB T412
