| Tensione - diretta (Vf) (max) a If: | 10V @ 12A |
|---|---|
| Tensione - inversa (Vr) (max): | 10000V (10kV) |
| Contenitore dispositivo fornitore: | - |
| Velocità: | Fast Recovery = 200mA (Io) |
| Serie: | - |
| Tempo di ripristino inverso (trr): | 2µs |
| imballaggio: | Bulk |
| Contenitore / involucro: | Module |
| Temperatura di funzionamento - Giunzione: | -55°C ~ 150°C |
| Tipo montaggio: | Chassis Mount |
| Tipo diodo: | Standard |
| Corrente - Dispersione inversa a Vr: | 4µA @ 10000V |
| Corrente - raddrizzata media (Io): | 12A |
| Capacità a Vr, F: | - |
S4KW2C-1N
RECT ASSY -CT 16A 2KV STD
S4KW4C-2D
RECT ASSY DOUBLER 4KV 6A STD
S4KW2C-1P
RECT ASSY -+CT 16A 2KV STD
S4KW10C-5P
DIODE GEN PURP 10KV 12A MODULE
S4KW10C-5D
DIODE GEN PURP 10KV 6A MODULE
S4KW16KA-4
DIODE GEN PURP 16KV 6A MODULE
S4KW2C-1D
RECT ASSY DOUBLER 2KV 8A STD
S4KW12C-6N
DIODE GEN PURP 12KV 12A MODULE
S4KW12C-6P
DIODE GEN PURP 12KV 12A MODULE
S4KW12C-6D
DIODE GEN PURP 12KV 6A MODULE
SIT1602BI-73-18N-18.432000D
-40 TO 85C, 2016, 50PPM, 1.8V, 1
SIT1602BC-83-18E-48.000000T
-20 TO 70C, 7050, 50PPM, 1.8V, 4
SIT1602BC-83-18N-6.000000T
-20 TO 70C, 7050, 50PPM, 1.8V, 6
SIT1602BI-83-18S-19.200000T
-40 TO 85C, 7050, 50PPM, 1.8V, 1
SIT1602BI-33-30S-24.000000Y
-40 TO 85C, 5032, 50PPM, 3.0V, 2
SIT1602BI-72-18N-24.000000D
-40 TO 85C, 2016, 25PPM, 1.8V, 2
SIT1602BC-81-30S-19.200000T
-20 TO 70C, 7050, 20PPM, 3.0V, 1
SIT1602BC-81-XXN-25.000000Y
-20 TO 70C, 7050, 20PPM, 2.25V-3
ASTMHTE-50.000MHZ-XC-E-T
OSC MEMS 50MHZ H/LVCMOS SMD
SIT1602BI-73-33E-4.096000G
-40 TO 85C, 2016, 50PPM, 3.3V, 4
